Patent attributes
A method for manufacturing a pixel structure is provided. A first conductive layer is formed on a substrate and patterned using a first mask to form a gate. A dielectric layer is formed over the substrate to cover the gate. A semiconductor material layer and a second conductive layer are sequentially formed over the dielectric layer. The second conductive layer is patterned using a second mask to form a pixel electrode. A patterned photo-resist layer is formed by using the first mask again such that the semiconductor material layer above the gate is protected. The semiconductor material layer is patterned to form a semiconductor layer using the pixel electrode and the patterned photo-resist layer as an etching mask. The patterned photo-resist layer is removed. A third conductive layer is formed and patterned to form a source/drain by using a third mask. The drain is electrically connected to the pixel electrode.
