Patent 7582571 was granted and assigned to Tokyo Electron on September, 2009 by the United States Patent and Trademark Office.
A substrate processing method using a substrate processing apparatus including: a process container holding a substrate to be processed therein; first gas supplying means having flow rate adjusting means for supplying a first process gas to the process container; and second gas supplying means supplying a second process gas to the process container, the substrate processing method including: a first step of controlling a flow rate of the first process gas to be a first flow rate by the flow rate adjusting means and supplying the first process gas in a first direction; a second step of discharging the first process gas from the process container; a third step of supplying the second process gas to the process container; and a fourth step of discharging the second process gas from the process container, in a repeated manner, wherein a step of stabilizing the flow rate of the process gas is set between a primary first step and a secondary first step performed subsequently to the primary first step.