Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Myung Cheol Yoo0
Date of Patent
September 1, 2009
0Patent Application Number
112472250
Date Filed
October 12, 2005
0Patent Primary Examiner
Patent abstract
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
