US Patent 7585377 Critical current density in Nb

Critical current densities of internal tin wire having values of at least 2000 A/mm2 at temperature of 4.2 K and in magnetic field of 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt % Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; and barrier thickness relative to the filament thickness; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.