US Patent 7585688 Method for manufacturing semiconductor optical device

A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on a top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiO2 film on the waveguide ridge and the channels, leaving the first resist pattern on a top surface of the waveguide ridge; forming a second resist pattern covering the SiO2 film on the channels, and exposing the top surface of the SiO2 film on top of the waveguide ridge; removing the SiO2 film by dry etching using the second resist pattern as a mask; removing the first and second resist patterns by a wet method; and forming a p-side electrode.