Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jhon-Jhy Liaw0
Date of Patent
September 8, 2009
0Patent Application Number
114051020
Date Filed
April 17, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A butted contact structure forming a source contact electrically connecting a voltage node and a well region and method for forming the same, the butted contact structure including an active region having a well region disposed adjacent an electrical isolation region on a semiconductor substrate; a MOSFET device including a source and drain region on the active region; and, a conductive contact having a first portion formed to the source region and a second portion formed through the electrical isolation region to the doped well region.
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