US Patent 7586777 Resistance variable memory with temperature tolerant materials
Patent 7586777 was granted and assigned to Micron Technology on September, 2009 by the United States Patent and Trademark Office.
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Patent abstract
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device.
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US Patent 07586777 Resistance variable memory with temperature tolerant materials US Patent 7586777 Resistance variable memory with temperature tolerant materials
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Patent Number
0758677700
Patent Number
758677700
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075867770
Date of Patent
September 8, 2009
0Patent Application Number
120736530
Date Filed
March 7, 2008
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075867770
Date of Patent
September 8, 2009
0Patent Application Number
120736530
Date Filed
March 7, 2008
0Official Website
Patent Primary Examiner
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US Patent 07586777 Resistance variable memory with temperature tolerant materials
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07586777
Date of patent
September 8, 2009
Patent application number
12073653
Date Filed
March 7, 2008
Patent primary examiner
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