US Patent 7586967 Semiconductor laser and method of manufacturing the same
Patent 7586967 was granted and assigned to NEC Corporation on September, 2009 by the United States Patent and Trademark Office.
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A semiconductor laser manufactured by selective MOVPE growth, in which the lattice relaxation of recombination layers grown on large width portions is suppressed, the leak current is suppressed, and the reliability is high. When a semiconductor layer is manufactured by selective MOVPE growth, a DH mesastripe (6) is epitaxially grown on a small width portion (14) which is a spacing of a silicon oxide mask (13). The average strain of the DH mesa stripe (6) is shifted to the compression strain side to an extent that lattice relaxation is not caused. As a result, the tensile strains of recombination layers (16) grown on large width portions (15) are mitigated.
US Patent 07586967 Semiconductor laser and method of manufacturing the same US Patent 7586967 Semiconductor laser and method of manufacturing the same
US Patent 07586967 Semiconductor laser and method of manufacturing the same
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