Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 15, 2009
Patent Application Number
11279064
Date Filed
April 7, 2006
Patent Citations Received
0
...
Patent Primary Examiner
Patent abstract
An iPVD system is programmed to deposit a barrier and/or seed layer using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within an IPVD processing chamber. In the preferred embodiment, an IPVD apparatus having a frusto-conical ruthenium target equipped with a high density ICP source is provided.
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