Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 15, 2009
Patent Application Number
11594746
Date Filed
November 9, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
Recently, with shortened wavelengths employed in aligners, it is now difficult to use a material containing a benzene ring as a photoresist material. Since resist has extremely low plasma resistance, formation of deep holes using a photoresist as a dry etching mask is difficult. Under such circumstances, in the present invention, amorphous carbon film 6 is formed on photoresist 4 in which first hole 5 is formed, and using amorphous carbon film 6 as a mask, deep second hole 7 is formed in a etch target material such as underlying SiO2 film 2.
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