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US Patent 7589379 Power semiconductor and method of fabrication

Patent 7589379 was granted and assigned to Cambridge Semiconductor Limited on September, 2009 by the United States Patent and Trademark Office.

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Patent abstract

This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and methods for their fabrication.

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