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US Patent 7592103 Electron beam writing method and lithography mask manufacturing method

Patent 7592103 was granted and assigned to Hoya on September, 2009 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee
Hoya
Hoya
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
7592103
Date of Patent
September 22, 2009
Patent Application Number
11094306
Date Filed
March 31, 2005
Patent Primary Examiner
‌
Christopher G Young
Patent abstract

A writing pattern to be a correcting object is divided by a rough mesh for a Foggy effect correction and a fine mesh for a proximity effect correction, a rate of an area occupied by the pattern to be written for each of the meshes is obtained, a stored energy based on a Foggy effect and a proximity effect in execution of exposure in a state in which a correction for a calculating object mesh is not carried out at all is calculated, an dose in the fine mesh for a proximity effect correction is obtained by a first calculation in such a manner that an influence of the Foggy effect and the proximity effect is reduced and a pattern and a dimension which can disregard the influence of the Foggy effect and the proximity effect are coincident with each other by the stored energy which is calculated, are calculation is carried out in such a manner that the pattern and the dimension which can disregard the influence of the Foggy effect and the proximity effect are coincident with each other with the influence of the Foggy effect and the proximity effect fixed, and the recalculation is repeated until desirable precision in a dimension is reached.

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