Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 22, 2009
Patent Application Number
11295902
Date Filed
December 6, 2005
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device is provided. The method includes: forming a plurality of gate lines on a substrate by performing an etching process; forming an oxide layer on the gate lines and the substrate by employing an atomic layer deposition (ALD) method; and sequentially forming a buffer oxide layer and a nitride layer on the oxide layer.
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