US Patent 7592272 Manufacturing method of semiconductor integrated circuit
Patent 7592272 was granted and assigned to Hitachi on September, 2009 by the United States Patent and Trademark Office.
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An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an atomic layer deposition method. The atomic deposition method is performed by introducing a hafnium compound precursor, introducing a yttrium compound precursor and introducing an oxidant as one cycle. In the atomic deposition method, the addition amount of yttrium into hafnia is controlled accurately by controlling the time of introducing the hafnium compound precursor and the yttrium compound precursor and controlling the replacement ratio of OH groups on a sample surface by each of the precursors.
US Patent 07592272 Manufacturing method of semiconductor integrated circuit US Patent 7592272 Manufacturing method of semiconductor integrated circuit
US Patent 07592272 Manufacturing method of semiconductor integrated circuit
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