US Patent 7592637 Light emitting diodes with reflective electrode and side electrode

A light emitting diode includes a first doped semiconductor layer, an active region and a second doped semiconductor layer. The first reflective electrode of the light emitting diode is connected to the edge surfaces of the first doped semiconductor layer. The second reflective electrode includes an optically transparent layer and is connected to the second doped semiconductor layer. The second reflective electrode may include a plurality of electrically conductive contacts extending from a reflective conductive metallic layer through a transparent layer. A method is described for fabricating the light emitting diode.