A bond pad structure of an integrated circuit is provided. The bond pad structure includes a conductive bond pad, a first dielectric layer underlying the bond pad, and an Mtop plate located in the first dielectric layer and underlying the bond pad. The Mtop plate is a solid conductive plate and is electrically coupled to the bond pad. The bond pad structure further includes a first passivation layer over the first dielectric layer wherein the first passivation layer has at least a portion under a middle portion of the bond pad. At least part of an active circuit is located under the bond pad.