Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 29, 2009
Patent Application Number
11430993
Date Filed
May 10, 2006
Patent Primary Examiner
Patent abstract
In a pattern formation method, a resist film is formed on a substrate, an alkali-soluble first barrier film is formed on the resist film and an alkali-insoluble second barrier film is formed on the first barrier film. Subsequently, with a liquid provided on the second barrier film, pattern exposure is performed by selectively irradiating the resist film with exposing light through the second barrier film and the first barrier film. Then, after removing the second barrier film, the resist film having been subjected to the pattern exposure is developed, so as to remove the first barrier film and form a resist pattern made of the resist film.
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