Patent attributes
In a method for manufacturing a light detector that is provided with an apertured part for incident light on an upper structural layer stack laminated on a semiconductor substrate, a polyimide film, which is applied in order to protect a silicon-nitride film on an upper surface of the upper structural layer stack, is properly removed from the apertured part, allowing, e.g., the intensity of light incident within the apertured part to be made uniform. A smoothing film 140 is applied to the surface of the upper structural layer stack 86, smoothly covering corner parts 142 on the aperture edge of the apertured part 116. The smoothing film 140 is etched and the corner parts 142 that are exposed on the aperture edge, where the smoothing film 140 is thin, are removed by the etching. The aperture edge of the apertured part 116 is thereby enlarged. After the smoothing film 140 has been detached, a polyimide film is applied. The polyimide film can be prevented from remaining too thick within the apertured part 116 and can be easily removed therefrom due to the enlargement of the aperture edge.
