Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 29, 2009
Patent Application Number
11553141
Date Filed
October 26, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
