Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tohru Fujita0
Date of Patent
October 6, 2009
Patent Application Number
11315100
Date Filed
December 23, 2005
Patent Primary Examiner
Patent abstract
Provided is a semiconductor device manufacturing method including the steps of: forming an n-type impurity diffusion region by ion-implanting arsenic into a capacitor formation region of a silicon substrate under a condition that a beam current is not less than 1 μA but less than 3 mA; forming a capacitor dielectric film on the capacitor formation region of the silicon substrate; and forming a capacitor upper electrode on the capacitor dielectric film.
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