Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akio Machida0
Tadahiro Kono0
Toshio Fujino0
Date of Patent
October 6, 2009
Patent Application Number
12134698
Date Filed
June 6, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.
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