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US Patent 7602229 High frequency control of a semiconductor switch

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Edits on 17 Sep, 2023
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Patent Inventor Names
Georg Sauerländer0
Thomas Dürbaum0
Tobias Georg Tolle0
Toni Lopez0
Edits on 16 Sep, 2023
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Patent abstract

Resonant gate driver circuits provide for efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate driver circuit is performed. This allows for a highly efficient and fast operation of the MOSFETs.

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Patent Citations Received
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US Patent 11671093 Driving device and control method
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Edits on 21 May, 2023
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edited on 21 May, 2023
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=076022290
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edited on 20 May, 2023
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US Patent 07602229 High frequency control of a semiconductor switch US Patent 7602229 High frequency control of a semiconductor switch

Infobox
Patent Number
076022290
Patent Number
76022290
Edits on 28 Apr, 2023
"Entity importer update"
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edited on 28 Apr, 2023
Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
076022290
Date of Patent
October 13, 2009
0
Patent Application Number
105707430
Date Filed
August 25, 2004
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=076022290
Patent Primary Examiner
‌
Dinh T Le
0
Edits on 18 Jun, 2022
"Entity importer update"
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edited on 18 Jun, 2022
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07602229
Edits on 3 Dec, 2021
"Created via: Entity Importer"
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created this topic on 3 Dec, 2021
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 US Patent 07602229 High frequency control of a semiconductor switch

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07602229
Date of patent
October 13, 2009
Patent application number
10570743
Date Filed
August 25, 2004
Patent primary examiner
‌
Dinh T Le

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