Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 13, 2009
Patent Application Number
11124113
Date Filed
May 9, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film;a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; anda plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.