Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 13, 2009
Patent Application Number
11938511
Date Filed
November 12, 2007
Patent Primary Examiner
Patent abstract
The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.
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