Patent attributes
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The MOSFETs have first and second channel regions formed over a well region above a substrate. A first source is formed in the first channel. A first metal makes electrical contact to the first source. A first gate region is formed over the first channel. A second source region is formed in the second channel. A second metal makes electrical contact to the second source. A second gate region is formed over the second channel. A common drain region is disposed between the first and second gate regions. A local oxidation on silicon region and field implant are formed over the common drain region. The metal contacts are formed in the same plane as a single metal layer.
