Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoon Suk Hyun0
Date of Patent
November 10, 2009
0Patent Application Number
118198520
Date Filed
June 29, 2007
0Patent Primary Examiner
Patent abstract
A method for forming a semiconductor device is provided. More specifically, a method for forming a bulb-shaped portion of a bulb-shaped recess gate is provided to overcome an etching process margin reduction caused by a spacer oxide film formed on sidewalls of a recess and thickly laminated to a lower part of a recess. In one aspect, a buffer dielectric film pattern is formed additionally by a plasma enhanced chemical vapor deposition (PECVD) process over a hard mask pattern, so that a sufficient process margin used for forming the bulb-shaped portion is ensured and a process margin for forming a semiconductor device is increased.
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