US Patent 7615842 Inductor integrated chip
Patent 7615842 was granted and assigned to Samsung on November, 2009 by the United States Patent and Trademark Office.
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An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.
US Patent 07615842 Inductor integrated chip US Patent 7615842 Inductor integrated chip
US Patent 07615842 Inductor integrated chip
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