Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiroshi Morikazu0
Date of Patent
November 17, 2009
Patent Application Number
11808719
Date Filed
June 12, 2007
Patent Primary Examiner
Patent abstract
A method of forming a via hole reaching a bonding pad in a wafer having an insulating film constituting a plurality of devices on the front surface of a substrate and bonding pads on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of:forming a non-through hole reaching the insulating film formed on the substrate by applying a pulse laser beam to the rear surface of the substrate;forming an insulating film on the inner wall of the hole which is formed in the substrate by the first step; andforming a via hole reaching a bonding pad by applying a pulse laser beam to the hole having the insulating film which is formed on the inner wall by the insulating film forming step.
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