Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 17, 2009
Patent Application Number
11437730
Date Filed
May 22, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes an n-channel MIS transistor and a p-channel MIS transistor on a semiconductor layer formed on an insulating layer, in which the channel of the n-channel MIS transistor is formed of a strained Si layer having biaxial tensile strain and the channel of the p-channel MIS transistor is formed of a strained SiGe layer having uniaxial compression strain in the channel length direction.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
