Patent attributes
A semiconductor laser device includes a supporting substrate having a wiring pattern thereon; LD fixed on the surface of the supporting substrate and having a signal output section that emits signal laser light and a monitoring output section that emits monitoring laser light; and a monitoring PD. The monitoring PD includes a semiconductor substrate having a region that transmits light of the wavelength of the monitoring laser light; and a light receiving section for photoelectric conversion formed on the surface of the semiconductor substrate, one incident surface of the side surfaces of the semiconductor substrate arranged in a position to which the monitoring laser light can be made incident, the light receiving section arranged in a position higher than the monitoring output section, and a back surface of the semiconductor substrate and the wiring pattern fixed on the supporting substrate to oppose each other.
