Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 24, 2009
Patent Application Number
11548230
Date Filed
October 10, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
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