US Patent 7623995 Method of extracting a semiconductor device compact model

This invention is a method of extracting a semiconductor device compact model by using knowledge of the equations used inside the compact model. Starting by fitting a small subset of the model parameters, the remaining model parameters are fitted and as each new subset of model parameters are fitted, the previously fitted model parameters are adjusted to compensate for the changes introduced due to the currently optimized parameters. This invention details the method of making these adjustments.