Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 1, 2009
Patent Application Number
11554612
Date Filed
October 31, 2006
Patent Primary Examiner
Patent abstract
An improved semiconductor device interconnect structure comprising a dielectric layer recessed with respect to the conductive interconnect features. This structure and method reduces embedded metallic residues from CMP scratches and metal cap applications and provides improved mechanical integrity at the capping layer/liner/dielectric interface.
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