Patent attributes
The present invention in one embodiment provides a method of forming an interconnect comprising, providing a interlevel dielectric layer atop a substrate, the interlevel dielectric layer including at least one tungsten (W) stud extending from an upper surface of the interlevel dielectric to the substrate; recessing an upper surface of the at least one tungsten (W) stud below the upper surface of the interlevel dielectric to provide at least one recessed tungsten (W) stud; forming a first low-k dielectric layer atop the upper surface of the interlevel dielectric layer and the at least one recessed tungsten (W) stud; forming a opening through the first low-k dielectric layer to expose an upper surface of the at least one recessed tungsten stud; and filling the opening with copper (Cu).
