Patent attributes
A memory cell includes: an irreversible storage element that writes data by breaking down an insulating film, with a write voltage being applied to its one end; and first and second transistors with one end being connected to the other end of the irreversible storage element. A non-volatile semiconductor storage device includes: the memory cell; write word lines and read word lines that are connected to the first transistor and the second transistor, respectively; write bit lines and read bit lines that are connected to the first transistor and the other end of the second transistor, respectively; a row decoder selectively driving the write word lines and the read word lines; and a write-disturb prevention circuit charging the read bit lines to a certain voltage in writing data.
