Patent attributes
The invention is directed to a method for controlling a critical dimension of a patterned photoresist layer. The method comprises steps of measuring a critical dimension of a raised pattern in a patterned photoresist layer after a photolithography process is performed on the photoresist layer. A determining process is performed to determine whether the critical dimension is within a critical dimension control limit range, wherein the critical dimension control limit range has a upper control limit and a lower control limit. An adjusting process is performed when the critical dimension is not within the critical dimension control limit range. When the critical dimension is smaller than the lower control limit, a photoresist reflow process is performed. When the critical dimension is larger than the upper control limit a photoresist trimming process is performed.
