Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tetsuya Nakai0
Date of Patent
December 15, 2009
0Patent Application Number
115413850
Date Filed
September 29, 2006
0Patent Primary Examiner
Patent abstract
A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon substrate so that a region corresponding to the oxide layer has a greater surface height than other regions; then implanting oxygen ions in the silicon substrate so as to form the oxide layer.
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