Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Osamu Matsuura0
Date of Patent
December 15, 2009
0Patent Application Number
115054170
Date Filed
August 17, 2006
0Patent Primary Examiner
Patent abstract
On forming a ferroelectric capacitor structure, an IrO2 film and an IrOx film which are constituents of an upper electrode layer are sequentially formed on a capacitor film. By RTA treatment at 600° C. to 750° C., in this case, at 725° C. for about one minute under an O2 atmosphere, only a surface layer of the IrOx film is oxidized, and a highly oxidized layer which is higher in oxidation degree as compared with the other portion of the IrOx film is formed.
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