US Patent 7635413 Method for preparing silicon carbide single crystal
Patent 7635413 was granted and assigned to Sumitomo Metal Industries on December, 2009 by the United States Patent and Trademark Office.
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A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
US Patent 07635413 Method for preparing silicon carbide single crystal US Patent 7635413 Method for preparing silicon carbide single crystal
US Patent 07635413 Method for preparing silicon carbide single crystal
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