Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshihiro Uozumi0
Kunihiro Miyazaki0
Tsuyoshi Matsumura0
Date of Patent
December 22, 2009
Patent Application Number
11520589
Date Filed
September 14, 2006
Patent Primary Examiner
Patent abstract
The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.
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