Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuaki Nakajima0
Kyoichi Suguro0
Date of Patent
December 22, 2009
0Patent Application Number
113952780
Date Filed
April 3, 2006
0Patent Primary Examiner
Patent abstract
In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.
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