Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 22, 2009
Patent Application Number
12039082
Date Filed
February 28, 2008
Patent Primary Examiner
Patent abstract
An N doped area neighboring to a P doped area on a semiconductor material, function respectively as a first gate and a second gate for transistors. A dielectric layer is made under the gates. A source and a drain are made under and near two sides of the dielectric layer, electrically coupled to the gate to form continuous multigate transistors.
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