US Patent 7635900 Insulating film and electronic device

An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.