Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 29, 2009
Patent Application Number
11776155
Date Filed
July 11, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver.
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