Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 29, 2009
0Patent Application Number
105861490
Date Filed
January 17, 2005
0Patent Primary Examiner
Patent abstract
An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EAsemicond; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 1018 cm−3, where a trapping group is a group having (i) an electron affinity EAX greater than or equal to EAsemicond and/or (ii) a reactive electron affinity EArxn greater than or equal to (EAsemicond.−2 eV).
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