Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Boaz Eitan0
Assaf Shappir0
Ilan Bloom0
Rustom Irani0
Date of Patent
December 29, 2009
0Patent Application Number
116464300
Date Filed
December 28, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or “strips” (or “stripes”). This provides having two physically separated charge storage regions (nitride “strips”, or “stripes”) in each memory cell.
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