Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuo Hashimi0
Hidekazu Sato0
Date of Patent
January 5, 2010
0Patent Application Number
111141110
Date Filed
April 26, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device fabrication method includes the steps of (a) forming a dielectric film on a semiconductor substrate; (b) etching the dielectric film by a dry process; and (c) supplying thermally decomposed atomic hydrogen onto the semiconductor substrate under a prescribed temperature condition, to remove a damaged layer produced in the semiconductor substrate due to the dry process.
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