US Patent 7645663 Method of producing non volatile memory device
Patent 7645663 was granted and assigned to Infineon Technologies on January, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming a floating gate structure is disclosed, and includes modifying the etch chemistry of a plasma treated reactive ion etch process using an inert atom to physically damage a dielectric region. The damaged dielectric region is subsequently etched using a wet etch process.
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Patent Inventor Names
Danny Pak-Chum Shum0
Haoren Zhuang0
John R. Power0
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US Patent 07645663 Method of producing non volatile memory device US Patent 7645663 Method of producing non volatile memory device
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Patent Number
076456630
Patent Number
76456630
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076456630
Date of Patent
January 12, 2010
0Patent Application Number
117798100
Date Filed
July 18, 2007
0Official Website
Patent Primary Examiner
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US Patent 07645663 Method of producing non volatile memory device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07645663
Date of patent
January 12, 2010
Patent application number
11779810
Date Filed
July 18, 2007
Patent primary examiner
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