Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 12, 2010
0Patent Application Number
114161120
Date Filed
May 3, 2006
0Patent Primary Examiner
Patent abstract
An object of the present invention is to provide a Group III nitride semiconductor stacked structure with a low dislocation density obtained by stacking only a semiconductor layer on a flat substrate by the use of a normal epitaxial growth method without processing the substrate or a deposit layer on the substrate, wherein the dislocation density is 1×107 cm−2 or less.
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