US Patent 7646798 Nitride semiconductor laser element
Patent 7646798 was granted and assigned to Nichia on January, 2010 by the United States Patent and Trademark Office.
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A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a protective film formed on at least one end face of the cavity, wherein the protective film is formed of a first film with a crystal structure that has the same axial orientation as that of the nitride semiconductor layer constituting the end face of the cavity, and a second film with a crystal structure that has a different axial orientation from that of the first film, in this order from the side of the end face.
US Patent 07646798 Nitride semiconductor laser element US Patent 7646798 Nitride semiconductor laser element
US Patent 07646798 Nitride semiconductor laser element
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